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Your cart is empty.Product type: MOSFET RoHS: Detailed Information Technology: Si Installation style: Through Hole Packaging/Box: TO-220-3 Transistor polarity: N-Channel Number of channels: 1 channel Vds drain source breakdown voltage: 200 V Id continuous drain current: 65 A Rds On drain source on resistance: 24 mOhms Vgs - Gate Source Voltage: -30 V,+30 V Vgs th gate source threshold voltage: 1.8 V QG gate charge: 70 nC Minimum operating temperature: -40 ° C Maximum operating temperature:+175 ° C Pd power dissipation: 330 W Channel mode: Enhancement Encapsulation: Tube Configuration: Single Descent time: 31 ns Forward transconductance - minimum value: 49 S Height: 15.65 mm Length: 10mm Product type: MOSFETs Rise time: 20 ns Subcategory: Transistors Transistor type: 1 N-Channel Typical shutdown delay time: 21 ns Typical connection delay time: 33 ns Width: 4.4 mm
